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  1. Refractive index of WS2 (Tungsten disulfide) - Jung

    Optical constants of WS 2 (Tungsten disulfide) Jung et al. 2019: monolayer film; n,k 0.38–0.89 µm

  2. Tungsten disulfide - Wikipedia

    "First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate". 2019 Symposium on VLSI Technology.

  3. 二硫化钨_百度百科

    二硫化钨(Tungsten disulfide)是一种无机化合物,分子式为WS2,分子量为247.97。 为灰色带金属光泽的细小结晶或粉末,属于六方晶系,有半导体性和抗磁性。 天然矿物为辉钨矿。 层状结构,易解 …

  4. High intrinsic phase stability of ultrathin 2M WS2 - Nature

    Feb 10, 2024 · Here, the authors demonstrate that the thermal and oxidation stability of 2M WS2 significantly increases as the thickness is reduced down to monolayer, expanding the potential …

  5. Tungsten Disulfide (WS2) Properties - Ossila

    Bulk tungsten disulfide (WS2) offers advantages such as exceptional lubricity and high thermal stability. Monolayer WS2 has desirable optoelectronic properties, including strong light-matter interactions, as …

  6. 二硫化钨 | 12138-09-9 - ChemicalBook

    1、纳米二硫化钨(简称WS2)主要用作石油催化剂:可以作为加氢脱硫催化剂,还被用做聚合、重整、水化、脱水和羟基化等过程的催化剂,而且因为具有裂解性能好,催化活性稳定可靠,使用寿命长等 …

  7. Structural, electronic, and electrochemical studies of WS2 phases using ...

    Feb 1, 2023 · In this study, four phases of WS2, including 2H, 1H, 1 T’, and 1 T, were studied using Density Functional Theory (DFT) and Machine Learning (ML). Accordingly, diffraction pattern, …

  8. WS2 - Tungsten disulfide - HQ graphene

    The 2H phase WS2 crystals produced at HQ Graphene have a typical lateral size of ~0.8-1 cm, are hexagonal shaped and have a metallic appearance. The 2H WS2 is n-type semiconductor, having a …

  9. 二硫化钨 (WS2): 制备、挑战与未来应用 - 知乎

    Oct 7, 2023 · 制备WS2需要特殊的生产条件,包括恰当的环境、高精度的温度和压力控制等。 比如,通常的生产过程首先需要在真空或者惰性气氛下将硫和钨原料进行反应,这样才能合成出高质量 …

  10. Recent Excellent Optoelectronic Applications Based on Two …

    Tungsten disulfide (WS2) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic …