Business Wire

Transphorm’s GaN First to Hit Short Circuit Robustness Milestone Key to Motor Drive Applications

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
Semiconductor Engineering

Short-Circuit Ruggedness In SiC MOSFETs

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
Nature

Thermal runaway-induced short-circuit arc in highly integrated lithium-ion battery systems: mechanisms, thresholds, and mitigation strategies

Fire incidents in electric vehicles attributed to thermal runaway (TR) in power batteries have emerged as the most critical hazard compromising both user safety and industrial advancement 1.
Nature

A fault diagnosis method for inter-turn short circuit based on magnetic field distribution

Inter-turn short circuit (ITSC) faults are among the most critical and frequent failures in power transformer windings. However, conducting a quantitative analysis of the winding insulation state ...
Electronic Design

Protecting Flybacks Against Short Circuits

For the PDF version of this article, including diagrams and/or equations, click here. In any off-line flyback converter design, it is possible that the output ...