Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...
When we speak of efficiency, we are referring mainly to electrical efficiency. This usage, however, is a restriction of the meaning of the word efficiency itself. In power-electronics applications the ...
Inverter gate driver optocouplers are ideally suited for IGBT and MOSFET applications for variable speed motor drives. Their high output peak currents, coupled with high voltage safety standards ...
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...
TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of "TB9150FNG," an opto-isolated IGBT [1] gate pre-driver IC with ...
This manual outlines the features of the ACPL-P349/W349 Evaluation Board and the configuration required for evaluating Isolated IGBT or SiC/GaN MOSFET Gate Drivers. Visual inspection is required to ...
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