(Nanowerk News) Takashi Matsukawa and Meishoku Masahara and others, Silicon Nano-Device Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...
FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...
“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the ...
SAN FRANCISCO -- Jun 02, 2014 -- Stating that not all FinFETs are created equal, Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that the IP and ...
As the dimensions of devices scale down, the variations in the electrical parameters of CMOS transistors steadily increase. This is due to random fluctuations in the density of the dopants in the ...
Imec reports improved performance for both Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices. For Ge n-type FinFETs, pre-gate stack process optimization dramatically improved ...
For several generations of semiconductor technology, chip designers have derived great benefit from FinFETs, the three-dimensional field-effect transistors (FETs) marked by their thin vertical fins.
Infineon Technologies announced today that researchers have completed testing of a full integrated circuit built with multigate finFET transistors. The approximately 3000-transistor chip, fabricated ...
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